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Absolute Maximum Ratings
Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions
1)
Values
... 123 D ... 123 D1 Units V V A A V W C V 1200 1200 200 / 180 400 / 360 20 1380 - 40 . . .+150 (125) 2 500 7) Class F 40/125/56 200 / 130 400 / 360 1450 10 500 FWD 6) 260 / 180 400 / 360 1800 24 200
SEMITRANS(R) M IGBT Modules SKM 200 GA 123 D*) SKM 200 GB 123 D SKM 200 GB 123 D1 6) SKM 200 GAL 123 D 6) SKM 200 GAR 123 D 6)
RGE = 20 k Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40 040 DIN IEC 68 T.1
Inverse Diode IF= - IC Tcase = 25/80 C IFM= - ICM Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C IFSM tp = 10 ms; Tj = 150 C I2t
A A A A2s
SEMITRANS 3
Characteristics
Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE Conditions 1) VGE = 0, IC = 4 mA VGE = VCE, IC = 6 mA Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C VGE = 20 V, VCE = 0 IC = 150 A VGE = 15 V; IC = 200 A Tj = 25 (125) C VCE = 20 V, IC = 150 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz min. typ. max. - 6,5 3 - 1 3(3,7) - - 700 13 2 1,2 20 400 200 800 100 - - 2,5 - 1,2 7 - - 2,2 - 1,2 5,5 - - Units V V mA mA A V V S pF nF nF nF nH ns ns ns ns mWs mWs V V V m A C V V V m A C C/W C/W C/W VCES - 4,5 5,5 - 0,2 - 12 - - - 2,5(3,1) - 2,8(3,6) 95 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 10 1,5 0,8 - 220 100 600 70 24 17 2,0(1,8) 2,25(2,05) - 5 55(80) 8(20) 1,85(1,6) 2,0(1,8) - 3 60(90) 8(23) - - -
6) 6)
GA GB GAL GAR
td(on) VCC = 600 V tr V = -15 V / +15 V3) www..com GE IC = 150 A, ind. load td(off) tf RGon = RGoff = 5,6 Tj = 125 C Eon 5) 5) Eoff Inverse Diode 8) VF = VEC IF = 150 A VGE = 0 V; IF = 200 A Tj = 25 (125) C VF = VEC Tj = 125 C VTO Tj = 125 C rT IF = 150 A; Tj = 25 (125) C2) IRRM Qrr IF = 150 A; Tj = 25 (125) C2) FWD of types "GAL", "GAR" "123D1"8) 6) VF = VEC IF = 150 A VGE = 0 V; IF = 200 A Tj = 25 (125) C VF = VEC Tj = 125 C VTO Tj = 125 C rT IF = 150 A; Tj = 25 (125) C2) IRRM Qrr IF = 150 A; Tj = 25 (125) C2) Thermal Characteristics per IGBT Rthjc per diode / FWD "GAL; GAR" Rthjc per module Rthch
Features * MOS input (voltage controlled) * N channel, Homogeneous Si * Low inductance case * Very low tail current with low temperature dependence * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology * Large clearance (13 mm) and creepage distances (20 mm). Typical Applications: B6 - 153 * Switching (not for linear use) Tcase = 25 C, unless otherwise specified 2) IF = - IC, VR = 600 V, - diF/dt = 1500 A/s, VGE = 0 V 3) Use VGEoff = -5 ... -15 V 5) See fig. 2 + 3; RGoff = 5,6 6) The free-wheeling diodes of the GAL and GAR types have the data of the inverse diodes of SKM 300 GA 123 D 7) Visol = 4000 Vrms on request 8) CAL = Controlled Axial Lifetime Technology. Cases and mech. data B6-154 *) SEMITRANS 4 B6-168
1)
0,09 0,25/0,18 0,038
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B 6 - 149
SKM 200 GA 123 D...
Tj = 125 C VCE = 600 V VGE = + 15 V RG = 5,6
Fig. 1 Rated power dissipation Ptot = f (TC)
Fig. 2 Turn-on /-off energy = f (IC)
IC [A] 1000
1502iu.vpo
Tj = 125 C VCE = 600 V VGE = + 15 V IC = 150 A
t(p)= 20us
1 pulse TC = 25 C Tj < 150 C
100
100us
1ms 10
10ms
1 1 10 100 1000 10000 VCE [V]
Not for linear use
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Fig. 3 Turn-on /-off energy = f (RG)
ICpuls/IC 2.5
1502rso.vpo
Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
ICSC/ICN
1502soas.vpo
2
Tj < 150 C VGE = 15 V RGoff = 5,6 IC = 150 A
12
10
8
Tj < 150 C VGE = + 15 V tsc < 10 s L < 25 nH ICN = 150 A
Note: *Allowed numbers of short circuit:<1000 *Time between short circuit:>1s
1.5
6
1
4
0.5
2
0 0 500 1000 1500 VCE [V]
0 0 500 1000 1500 VCE [V]
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit IC = f (VCE)
B 6 - 150
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Tj = 150 C VGE > 15 V
Fig. 8 Rated current vs. temperature IC = f (TC)
IC [A] 200 180 160 140 120 100 80 60 40 20 0 0 1 2 3 4 VCE [V]
1502us3.vpo
IC [A] 200 180 160 140 120 100 80 60 40 20 0 0 1 2 17V 15V 13V 11V 9V 7V
1502us7.vpo
17V 15V 13V 11V 9V 7V
3
4 VCE [V]
www..com Fig. 9 Typ. output
characteristic, tp = 80 s; 25 C
Fig. 10 Typ. output characteristic, tp = 80 s; 125 C
IC [A] 320
1502gf3.vpo
Pcond(t) = VCEsat(t) . IC(t) VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) . IC(t) VCE(TO)(Tj) 1,5 + 0,002 (Tj - 25) [V] typ.: rCE(Tj) = 0,0066 + 0,000027 (Tj - 25) [] max.: rCE(Tj) = 0,0100 + 0,000033 (Tj - 25) [] +2 [V]; IC > 0,3 ICnom valid for VGE = + 15 -1 Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations
280 240 200 160 120 80 40 0 0 2 4 6 8 10 12 VGE [V]
Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V
(c) by SEMIKRON
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B 6 - 151
SKM 200 GA 123 D...
VGE [V] 20 18 16 14 600V 800V
1502Qg3.vpo
C [nF] 100
1502C.vpo
ICpuls = 150 A
VGE = 0 V f = 1 MHZ
10 Ciss
12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 QG [nC]
1
Coss Crss
0.1 0 10 20 30 40 VCE [V]
Fig. 13 Typ. gate charge characteristic
1502tic.vpo
Fig. 14 Typ. capacitances vs.VCE
t [ns] 104
1502trg.vpo
38
tdoff
tdon tr 102 tf
Tj = 125 C VCE = 600 V VGE = + 15 V RGon = 5,6 RGoff = 5,6 induct. load
tdoff 103 tdon tr 102
Tj = 125 C VCE = 600 V VGE = + 15 V IC = 150 A induct. load
9
tf
10
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200
300
400 IC [A]
10 0 20 40
5* >:@ :
60
Fig. 15 Typ. switching times vs. IC
Fig. 16 Typ. switching times vs. gate resistor RG
P (411
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Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
B 6 - 152
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(c) by SEMIKRON
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(c) by SEMIKRON
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B 6 - 153
SKM 200 GA 123 D...
SEMITRANS 3 Case D 56 UL Recognized File no. E 63 532 SKM 150 GB 123 D SKM 200 GB 123 D SKM 200 GB 123 D1 SKM 200 GB 173 D SKM 200 GB 173 D1
Dimensions in mm SKM 150 GAL 123 D Case D 57 ( D 56) SKM 200 GAL 123 D SKM 200 GAL 173 D
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SKM 150 GAR 123 D Case D 58 ( D 56)
SKM 200 GAR 123 D
Case outline and circuit diagrams
For SKM 200 GA 123 D (SEMITRANS 4) B 6 - 168 This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Three devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 3). Larger packing units of 12 and 20 pieces are used if suitable Accessories B 6 - 4. SEMIBOX C - 1.
Mechanical Data
Symbol M1 M2 a w
6)
Conditions to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals US Units (M6) (M6) min. 3 27 2,5 22 - -
Values typ. max. - 5 - 44 - 5 - 44 - 5x9,81 - 325
Units Nm lb.in. Nm lb.in. m/s2 g
Freewheeling diode B 6 - 149, remark 6.
B 6 - 154
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